Authors: Kenji Fukuda, Seiji Suzuki, Junji Senzaki, Ryouji Kosugi, Kiyoko Nagai, Toshihiro Sekigawa, Hideyo Okushi, Sadafumi Yoshida, Tomoyuki Tanaka, Kazuo Arai

1283

Accumulation-Mode SiC Power MOSFET Design Issues

Authors: Y. Wang, C. Weitzel, M. Bhatnagar

1287

Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology⁺

Authors: Dale Brown, Don McGrath, Matthew Nielsen, Nicole Krishnamurthy, James W. Kretchmer, Mario Ghezzo

1291

Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V

Authors: Reinhold Schörner, Peter Friedrichs, Dethard Peters, Heinz Mitlehner, Benno Weis, Dietrich Stephani

1295

Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs

Authors: Takeshi Ohshima, Masahito Yoshikawa, Hisayoshi Itoh, Kazutoshi Kojima, Sohei Okada, Isamu Nashiyama

1299

Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties

Authors: Philippe Godignon, Xavier Jordá, Miquel Vellvehi, Stefan Berberich, Josep Montserrat, Laurent Ottaviani

1303

Investigation of Lateral RESURF, 6H-SiC MOSFETs

Authors: Anant K. Agarwal, N.S. Saks, S.S. Mani, V.S. Hegde, P.A. Sanger

1307