Materials Science Forum Vols. 338-342

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https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

Defect Modeling and Simulation of 4-H SiC P-N Diode

Authors: N. Keskar, K. Shenai, Philip G. Neudeck

1351

6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects

Authors: M. Badila, Gheorghe Brezeanu, Jean-Pierre Chante, Marie Laure Locatelli, José Millan, Philippe Godignon, Alexander A. Lebedev, P. Lungu, V. Banu

1355

A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages

Authors: Jue Wang, B.W. Williams, Shankar E. Madathil, M.M. Desouza

1359

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Authors: K. Isoird, Laurent Ottaviani, Marie Laure Locatelli, Dominique Planson, Christophe Raynaud, Pascal Bevilacqua, Jean-Pierre Chante

1363

Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

Authors: Jeffery B. Fedison, Z. Li, V. Khemka, Nudjarin Ramungul, T. Paul Chow, Mario Ghezzo, James W. Kretchmer, Ahmed Elasser

1367

6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop

Authors: Yoshitaka Sugawara, Katsunori Asano, Ranbir Singh, John W. Palmour

1371

Theoretical and Experimental Study of 4H-SiC Junction Edge Termination

Authors: Xue Qing Li, Kiyoshi Tone, Li Hui Cao, Peter Alexandrov, Leonid Fursin, Jian Hui Zhao

1375

Monte Carlo Simulation of 4H-SiC IMPATT Diodes

Authors: Viktor Gružinskis, Yan Bin Luo, Jian Hui Zhao, M. Weiner, M. Pan, P. Shiktorov, E. Starikov

1379

Demonstration of High Performance Visible-blind 4H-SiC Avalanche Photodiodes

Authors: Feng Yan, Yan Bin Luo, Jian Hui Zhao, Chris Dries, Gregory Olsen

1383

2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Authors: Anant K. Agarwal, Sei Hyung Ryu, Ranbir Singh, Olof Kordina, John W. Palmour

1387