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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Table of Contents

Paper Title Page

Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors

Authors: Jeffery B. Fedison, T. Paul Chow, Mario Ghezzo, James W. Kretchmer, M.C. Nielsen

1391

4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control

Authors: Pankaj B. Shah, Bruce Geil, Kenneth A. Jones, T.E. Griffin, Michael A. Derenge

1395

Fabrication and Characterization of 4H-SiC GTOs and Diodes

Authors: Leonid Fursin, Kiyoshi Tone, Yan Bin Luo, Peter Alexandrov, Li Hui Cao, Jian Hui Zhao, M. Weiner, M. Pan

1399

100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter

Authors: S. Seshadri, W.B. Hall, J.C. Kotvas, P.A. Sanger

1403

SiC-Power Rectifiers

Authors: R. Held, M. Füllmann, E. Niemann

1407

Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs

Authors: Jue Wang, B.W. Williams, Shankar E. Madathil, M.M. Desouza

1411

Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC

Authors: Yi Tang, Nudjarin Ramungul, T. Paul Chow

1415

TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors

Authors: Kazuhiro Adachi, C. Mark Johnson, S. Ortolland, Nicolas G. Wright, Anthony G. O'Neill

1419

Operation of a 2500V 150A Si-IGBT / SiC Diode Module

Authors: H. Lendenmann, N. Johansson, D. Mou, M. Frischholz, B. Åstrand, P. Isberg, C. Ovren

1423

High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation

Authors: Sei Hyung Ryu, Ranbir Singh, John W. Palmour

1427