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Materials Science Forum
Vols. 357-359
Materials Science Forum
Vols. 353-356
Materials Science Forum
Vol. 352
Materials Science Forum
Vols. 350-351
Materials Science Forum
Vols. 347-349
Materials Science Forum
Vols. 343-346
Materials Science Forum
Vols. 338-342
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Vols. 331-337
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Vols. 329-330
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Vols. 327-328
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Vols. 318-320

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

ToC:

Table of Contents

Paper Title Page

Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors
Authors: Jeffery B. Fedison, T. Paul Chow, Mario Ghezzo, James W. Kretchmer, M.C. Nielsen
1391
4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control
Authors: Pankaj B. Shah, Bruce Geil, Kenneth A. Jones, T.E. Griffin, Michael A. Derenge
1395
Fabrication and Characterization of 4H-SiC GTOs and Diodes
Authors: Leonid Fursin, Kiyoshi Tone, Yan Bin Luo, Peter Alexandrov, Li Hui Cao, Jian Hui Zhao, M. Weiner, M. Pan
1399
100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter
Authors: S. Seshadri, W.B. Hall, J.C. Kotvas, P.A. Sanger
1403
SiC-Power Rectifiers
Authors: R. Held, M. Füllmann, E. Niemann
1407
Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs
Authors: Jue Wang, B.W. Williams, Shankar E. Madathil, M.M. Desouza
1411
Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC
Authors: Yi Tang, Nudjarin Ramungul, T. Paul Chow
1415
TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors
Authors: Kazuhiro Adachi, C. Mark Johnson, S. Ortolland, Nicolas G. Wright, Anthony G. O'Neill
1419
Operation of a 2500V 150A Si-IGBT / SiC Diode Module
Authors: H. Lendenmann, N. Johansson, D. Mou, M. Frischholz, B. Åstrand, P. Isberg, C. Ovren
1423
High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation
Authors: Sei Hyung Ryu, Ranbir Singh, John W. Palmour
1427

Showing 341 to 350 of 403 Paper Titles