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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342

Materials Science Forum Vols. 338-342

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342

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Paper Title Page

Pendeoepitaxy of GaN and InGaN LEDs on SiC

Authors: H.S. Kong, J. Edmond, K. Doverspike, D. Emerson, G. Bulman, K. Haberern, H. Dieringer, D. Slater

1477

Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO₂ and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy

Authors: F. Bertram, T. Riemann, D. Rudloff, J. Christen, A. Kaschner, Andreas Hoffmann, K. Hiramatsu

1483

High Quality GaN on Si(111) using (AlN/GaN)_x Superlattice and Maskless ELO

Authors: H. Lahrèche, V. Bousquet, M. Laügt, Olivier Tottereau, P. Vennéguès, B. Beaumont, Pierre Gibart

1487

Pendeo-Epitaxy^TM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition

Authors: Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Edward A. Preble, E.P. Carlson, Brian M. Robin, Robert F. Davis

1491

Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy

Authors: Tetsu Kachi, Kenji Itoh, Kazuyoshi Tomita, Hiroshi Tadano

1495

Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO₂ at Low Growth Temperature

Authors: Sang Beom Kang, W.Alan Doolittle, Stuart R. Stock, April S. Brown

1499

Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research

Authors: R.D. Vispute, R. Enck, A. Patel, Bin Ming, R.P. Sharma, T. Venkatesan, Charles Scozzie, Aivars J. Lelis, F. Barry McLean, T.S. Zheleva, Kenneth A. Jones

1503

Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour Deposition

Authors: V. Williams, Etienne Pernot, E. Ramberg, Elisabeth Blanquet, Jean Marie Bluet, Roland Madar

1507

AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow Region

Authors: Kanji Yasui, S. Hoshino, Takashi Akahane

1511

Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process

Authors: D.D. Avrov, Sergey I. Dorozhkin, Andrew O. Lebedev, V.P. Rastegaev, Yuri M. Tairov

1515