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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356High-Performance Surface-Channel Diamond...

High-Performance Surface-Channel Diamond Field-Effect Transistors

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

815-0

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.815

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Online since:

January 2001

Authors:

Hitoshi Umezawa, Hirotada Taniuchi, Takuya Arima, Minoru Tachiki, Hideyo Okushi, Hiroshi Kawarada

Keywords:

Cut-Off Frequency (PCF), Field-Effect Transistor, Hydrogen-Terminated Surface Conductive Layer

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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