Distribution of Strain in GaN and SiC Nanocrystals under Extreme Pressures

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Periodical:

Materials Science Forum (Volumes 378-381)

Edited by:

R. Delhez and E.J. Mittemeijer

Pages:

735-740

DOI:

10.4028/www.scientific.net/MSF.378-381.735

Citation:

B. F. Palosz et al., "Distribution of Strain in GaN and SiC Nanocrystals under Extreme Pressures", Materials Science Forum, Vols. 378-381, pp. 735-740, 2001

Online since:

October 2001

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$35.00

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