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HomeMaterials Science ForumMaterials Science Forum Vols. 378-381Distribution of Strain in GaN and SiC Nanocrystals...

Distribution of Strain in GaN and SiC Nanocrystals under Extreme Pressures

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Periodical:

Materials Science Forum (Volumes 378-381)

Pages:

735-740

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.378-381.735

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Online since:

October 2001

Authors:

Bogdan F. Palosz, Stanislaw Gierlotka, Ewa Grzanka, K. Akimow, Roman Pielaszek, Piotr Biczyk, A. Grzegorczyk, Svetlana Stelmakh, Ulrich Bismayer, J.F. Janik

Keywords:

Compressibility, Gallium Nitride (GaN), High-Pressure, Nanomaterial, Silicon Carbide (SiC), Strain

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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