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Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiC
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Model for Macroscopic Slits in 6H- and 4H-SiC Single Crystals
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Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
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The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide
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Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
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Observation of Planar Defects in 2-inch SiC Wafer
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393The Nucleation of Polytype Inclusions during the...

The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon Carbide

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Silicon Carbide and Related Materials 2001

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Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

71-74

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.71

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Online since:

April 2002

Authors:

Edward M. Sanchez, A. Kopec, S. Poplawski, R. Ware, S.N. Holmes, Shao Ping Wang, A.G. Timmerman

Keywords:

Bulk Growth, Inclusion, Micropipe, Nucleation, Polytype, Silicon Carbide (SiC), Sublimation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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