Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization

Hachizo Muto; Takashi Asano; Takeshi Kusumori

doi:10.4028/www.scientific.net/MSF.433-436.225

Paper Titles

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
p.209

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
p.213

Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
p.217

Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor
p.221

Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
p.225

Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
p.229

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
p.233

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
p.237

Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
p.241

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Preparation of SiC/Si(111) Hetero-Epitaxial...

Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 2002

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

225-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.225

Citation:

Cite this paper

Online since:

September 2003

Authors:

Hachizo Muto, Takashi Asano, Takeshi Kusumori

Keywords:

Hetero-Epitaxial Film, P-N Junction, Pulsed Laser Ablation, RHEED, α-SiC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] A. Tayer, D. S. Laidler: Brit. J. Appl. Phys. 1 (1950), p.174.

Google Scholar

[2] J. Itoh, M. Iwatsuki, T. Fukazawa: Bunseki Kagaku (Analytical Chemistry) 2 (1993), p.445.

Google Scholar

[3] J. A. Edmond, H. S. Kong, C. H. Carter Jr.: Physica B 185 (1993), p.453.

Google Scholar

[4] H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. J. Burns: Appl. Phys. 76 (1994), p.1363.

Google Scholar

[5] Y. Wang, J. Lin, C. H. A. Huan, Z.C. Feng, S.J. Chua: Thin Solid Films 384 (2001) , p.173.

Google Scholar

[6] N. Nordell, S. Nishino, J. -W. Yang, C. Jacob, P. Pirouz: Appl. Phys. Lett. 64 (1994), p.1647.

Google Scholar

[7] T. Zehnder, A. Blatter, A. Bachli: Thin Solid Films 241 (1994), p.138.

Google Scholar

[8] J. S. Pelt, M. E. Ramsey, S. M. Durbin: Thin Solid Films 371 (2000), p.72.

Google Scholar

[9] T. Takahama, T. Yokoya, H. Kurosawa, Research Report of Miyazaki Univ. Eng. Div. 28 (1998), p.101.

Google Scholar

[10] S. Kaneda, Y. Sakamoto, C. Nishi, M. Kanaya, S. Hannai: J. J. Appl. Phys. 25, (1986), p.1307.

Google Scholar

[11] H. Nagasawa, K. Yagi, Phys. Stat. Sol. (B) 202 (1997), p.335.

Google Scholar

[12] Hachizo Muto, Takeshi Kusumori, Mater. Sci. Forum 389-393 (2002), p.371.

Google Scholar

[13] Takeshi Kusumori , Hachizo Muto, Mater. Sci. Forum 389-393 (2002), p.375.

Google Scholar

[14] Y. Okamura, M. Matsusita, T. Kito and H. Takasu, The 49th Symp. Jpn. Appl. Phys. Soc. (2002), p.429.

Google Scholar