Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor

V. De Renzi; R. Biagi; U. Del Pennino

doi:10.4028/www.scientific.net/MSF.433-436.221

Paper Titles

Growth of p-Type SiC Layer by Sublimation Epitaxy
p.205

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
p.209

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
p.213

Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
p.217

Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor
p.221

Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
p.225

Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
p.229

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
p.233

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
p.237

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Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

221-224

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.221

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Online since:

September 2003

Authors:

V. De Renzi, R. Biagi, U. Del Pennino

Keywords:

Acetylene, HREELS, Silicon Carbide (SiC), Surface Chemical Reaction, X-Ray Photoelectron Spectroscopy (XPS)

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