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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Control of Pendeo Epitaxial Growth of 3C-SiC on...

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.209

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Online since:

September 2003

Authors:

Yoichi Okui, Chacko Jacob, Satoru Ohshima, Shigehiro Nishino

Keywords:

HMDS, Lateral Epitaxial Overgrowth, Pendeo Epitaxy, Scanning Electron Microscope (SEM)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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