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Paper Titles
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The Effect of Thermal Gradients on SiC Wafers
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Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
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Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

197-200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.197

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Online since:

September 2003

Authors:

Tsunenobu Kimoto, Katsunori Danno, Keiko Fujihira, Hiromu Shiomi, Hiroyuki Matsunami

Keywords:

(03-38), Epitaxial Growth, Micropipe Closing

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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References

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