Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

197-200

DOI:

10.4028/www.scientific.net/MSF.433-436.197

Citation:

T. Kimoto et al., "Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes", Materials Science Forum, Vols. 433-436, pp. 197-200, 2003

Online since:

September 2003

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$35.00

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