Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

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Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

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197-200

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T. Kimoto et al., "Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes", Materials Science Forum, Vols. 433-436, pp. 197-200, 2003

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September 2003

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