Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

189-192

DOI:

10.4028/www.scientific.net/MSF.433-436.189

Citation:

N.S. Savkina et al., "Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers", Materials Science Forum, Vols. 433-436, pp. 189-192, 2003

Online since:

September 2003

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.