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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Features of Sublimation Growth on Porous SiC...

Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

189-192

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.189

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Online since:

September 2003

Authors:

N.S. Savkina, V.B. Shuman, V.V. Ratnikov, Alexander A. Lebedev, A.Yu. Rogachev

Keywords:

IR-Spectroscopy, PL, Porous SiC Characteristics, Sublimation Growth

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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DOI: 10.4028/www.scientific.net/msf.389-393.271

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