Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD

Hiroaki Saitoh; Tsunenobu Kimoto; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.433-436.185

Paper Titles

Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
p.169

Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
p.173

Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
p.177

Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
p.181

Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
p.185

Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
p.189

The Effect of Thermal Gradients on SiC Wafers
p.193

Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
p.197

Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
p.201

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Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

185-188

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.185

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Online since:

September 2003

Authors:

Hiroaki Saitoh, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Gas Flow Analysis, Homoepitaxial Growth, Hot-Wall CVD, Uniformity

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