Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method

Pierre Ferret; A. Leray; G. Feuillet; P. Lyan; C. Pudda; Thierry Billon

doi:10.4028/www.scientific.net/MSF.433-436.201

Paper Titles

Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
p.185

Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
p.189

The Effect of Thermal Gradients on SiC Wafers
p.193

Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
p.197

Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method
p.201

Growth of p-Type SiC Layer by Sublimation Epitaxy
p.205

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
p.209

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
p.213

Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
p.217

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Epitaxial Growth of 6H-SiC by a Vapor Liquid Solid Method

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

201-204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.201

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Online since:

September 2003

Authors:

Pierre Ferret, A. Leray, G. Feuillet, P. Lyan, C. Pudda, Thierry Billon

Keywords:

6H-SiC, Liquid Phase Epitaxy (LPE), Vapor Liquid Solid Mechanism

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References

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