Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

213-216

DOI:

10.4028/www.scientific.net/MSF.433-436.213

Citation:

P. G. Neudeck et al., "Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy", Materials Science Forum, Vols. 433-436, pp. 213-216, 2003

Online since:

September 2003

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$35.00

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