Paper Titles

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
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Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
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Thin Film SiC Epitaxy on Si(111) from Acetylene Precursor
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Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
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Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
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High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
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SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
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Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
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Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Hetero-Epitaxial Growth of 3C-SiC on Carbonized...

Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

229-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.229

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Online since:

September 2003

Authors:

Hideki Shimizu, Kensaku Hisada

Keywords:

3C-SiC/Si, Carbonization, Ellipsometry, Hetero-Epitaxial Growth, Optical Constant, Plasma-Assisted CVD, Surface Roughness (SR), Void Rate

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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