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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436High-Resolution XRD Investigations of the Strain...

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

233-236

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.233

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Online since:

September 2003

Authors:

Petia Weih, Volker Cimalla, Christian Förster, Joerg Pezoldt, Thomas Stauden, Lothar Spieß, Henry Romanus, M. Eickhoff, M. Hermann, Pierre M. Masri, Oliver Ambacher

Keywords:

3C-SiC, Epitaxial Growth, MBE, Strain Reduction, X-Ray Diffraction (XRD)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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