High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

233-236

DOI:

10.4028/www.scientific.net/MSF.433-436.233

Citation:

P. Weih et al., "High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates", Materials Science Forum, Vols. 433-436, pp. 233-236, 2003

Online since:

September 2003

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