Paper Titles

Preparation of SiC/Si(111) Hetero-Epitaxial Junctions by PLD and Crystallographic and l-V Characterization
p.225

Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
p.229

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
p.233

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
p.237

Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
p.241

Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
p.247

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
p.253

Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
p.257

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
p.261

HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Production of 8-Inch SiC Wafer by Hybridization of...

Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

241-246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.241

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Online since:

September 2003

Authors:

K. Murata, Naoki Fujioka, Y. Chinone, Shigehiro Nishino

Keywords:

3C-SiC, 8-Inch, Hybrid Wafer

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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