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Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
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Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
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Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
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Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
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Doping-Related Strain in n-Doped 4H-SiC Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Conditions for Micropipe Dissociation by 4H-SiC...

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.261

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Online since:

September 2003

Authors:

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Toshiyuki Miyanagi, Kunikaza Izumi

Keywords:

4H-SiC, Growth Conditions, Micropipe, Micropipe Dissociation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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