Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices

Michael Dudley; X. Huang; William M. Vetter; Philip G. Neudeck

doi:10.4028/www.scientific.net/MSF.433-436.247

Paper Titles

Hetero-Epitaxial Growth of 3C-SiC on Carbonized Silicon Substrates
p.229

High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates
p.233

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures
p.237

Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
p.241

Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices
p.247

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
p.253

Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
p.257

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
p.261

Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
p.265

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Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices

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Materials Science Forum (Volumes 433-436)

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247-252

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https://doi.org/10.4028/www.scientific.net/MSF.433-436.247

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Online since:

September 2003

Authors:

Michael Dudley, X. Huang, William M. Vetter, Philip G. Neudeck

Keywords:

Defect, Micropipe, Mismatch, Screw Dislocation, Synchrotron Topography, Triple-Axis Diffraction

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