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Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Stacking Fault Formation in Highly Doped 4H-SiC...

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

253-256

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.253

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Online since:

September 2003

Authors:

Hun Jae Chung, Jin Qiang Liu, Anne Henry, Marek Skowronski

Keywords:

Electron Microscopy, Stacking Fault, Structural Defects

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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