Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

253-256

DOI:

10.4028/www.scientific.net/MSF.433-436.253

Citation:

H. J. Chung et al., "Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing", Materials Science Forum, Vols. 433-436, pp. 253-256, 2003

Online since:

September 2003

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$35.00

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