Doping-Related Strain in n-Doped 4H-SiC Crystals

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

269-272

DOI:

10.4028/www.scientific.net/MSF.433-436.269

Citation:

H. Jacobsson et al., "Doping-Related Strain in n-Doped 4H-SiC Crystals", Materials Science Forum, Vols. 433-436, pp. 269-272, 2003

Online since:

September 2003

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$35.00

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