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Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
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Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
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Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
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Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
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Doping-Related Strain in n-Doped 4H-SiC Crystals
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Stacking Faults in 3C-SiC Relax Lattice Deformation
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Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
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Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Doping-Related Strain in n-Doped 4H-SiC Crystals

Doping-Related Strain in n-Doped 4H-SiC Crystals

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

269-272

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.269

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Online since:

September 2003

Authors:

Henrik Jacobsson, Jens Birch, Ulf Lindefelt, Christer Hallin, Anne Henry, Rositza Yakimova, Erik Janzén

Keywords:

4H-SiC, Doping, Model, Strain, Synchrotron Topography

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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