Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

Francisco M. Morales; S.I. Molina; Daniel Araujo; Volker Cimalla; Joerg Pezoldt

doi:10.4028/www.scientific.net/MSF.433-436.285

Paper Titles

Stacking Faults in 3C-SiC Relax Lattice Deformation
p.273

Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
p.277

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
p.281

Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
p.285

High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
p.289

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
p.293

Dynamics of 4H-SiC Plasticity
p.297

Time-Resolved Photoluminescence of Deep Centers in Semi-Insulating 4H-SiC
p.301

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Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

Pages:

285-288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.285

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Online since:

September 2003

Authors:

Francisco M. Morales, S.I. Molina, Daniel Araujo, Volker Cimalla, Joerg Pezoldt

Keywords:

MBE, RTCVD, Si Carbonisation , Silicon Carbide (SiC)

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References

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DOI: 10.1016/s0040-6090(98)01589-2

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