Stacking Faults in 3C-SiC Relax Lattice Deformation

Naoki Hatta; Kuniaki Yagi; Takamitsu Kawahara; Hiroyuki Nagasawa

doi:10.4028/www.scientific.net/MSF.433-436.273

Paper Titles

Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
p.257

Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
p.261

Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman Spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
p.265

Stacking Faults in 3C-SiC Relax Lattice Deformation
p.273

Characteristics of Planar Defects in Shallow Trenches Related to the Presence of Micropipes
p.277

Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
p.281

Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
p.285

High-Accuracy Lattice Constant Measurements of Electron-Irradiated 6H-SiC Single Crystals
p.289

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Stacking Faults in 3C-SiC Relax Lattice Deformation

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

273-276

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.273

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Online since:

September 2003

Authors:

Naoki Hatta, Kuniaki Yagi, Takamitsu Kawahara, Hiroyuki Nagasawa

Keywords:

3C-SiC, Lattice Deformation, Stacking Fault, Warp

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References

[1] A. Yahata, Li Zhang and T. Shinohe: Mater. Sci. Forum 389-393 (2002), p.667.

Google Scholar

[2] H. Nagasawa, K. Yagi, T. Kawahara: J. Cryst. Growth 237-239 (2002), p.1244.

Google Scholar

[3] P. Kackell, J. Furthmuller, and F. Bechstedt, Phys. Rev. B, 58 (1998), p.1326.

Google Scholar

[4] C. Long, S. A. Ustin and W. Ho: J. Appl. Phys. 86 (1999), p.2509.

Google Scholar

[5] H. Nagasawa, K. Yagi, T. Kawahara: Mater. Sci. Forum 389-393 (2002), p.319.

Google Scholar