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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Growth of p-Type SiC Layer by Sublimation Epitaxy

Growth of p-Type SiC Layer by Sublimation Epitaxy

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

205-208

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.205

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Online since:

September 2003

Authors:

S. Ohta, Tomoaki Furusho, H. Takagi, Satoru Ohshima, Shigehiro Nishino

Keywords:

Boron Doping, p-Type, Sublimation Epitaxy

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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