Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation

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Materials Science Forum (Volumes 433-436)

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Peder Bergman and Erik Janzén

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173-176

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S. Dannefaer et al., "Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation", Materials Science Forum, Vols. 433-436, pp. 173-176, 2003

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September 2003

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