Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation

S. Dannefaer; V. Avalos; Mikael Syväjärvi; Rositza Yakimova

doi:10.4028/www.scientific.net/MSF.433-436.173

Paper Titles

Temperature Effects in SiC Epitaxial Growth
p.157

Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD
p.161

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
p.165

Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
p.169

Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
p.173

Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
p.177

Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
p.181

Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
p.185

Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
p.189

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Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation

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Silicon Carbide and Related Materials - 2002

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Materials Science Forum (Volumes 433-436)

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173-176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.173

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Online since:

September 2003

Authors:

S. Dannefaer, V. Avalos, Mikael Syväjärvi, Rositza Yakimova

Keywords:

Epilayer, Positron Annihilation, Silicon Carbide (SiC), Vacancy

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References

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