Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

173-176

DOI:

10.4028/www.scientific.net/MSF.433-436.173

Citation:

S. Dannefaer et al., "Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation", Materials Science Forum, Vols. 433-436, pp. 173-176, 2003

Online since:

September 2003

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$35.00

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