Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

161-164

DOI:

10.4028/www.scientific.net/MSF.433-436.161

Citation:

K. Fujihira et al., "Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD", Materials Science Forum, Vols. 433-436, pp. 161-164, 2003

Online since:

September 2003

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$35.00

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