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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Fast Epitaxial Growth of High-Quality 4H-SiC by...

Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

161-164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.161

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Online since:

September 2003

Authors:

Keiko Fujihira, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Deep Level Transient Spectroscopy, Fast Epitaxy, Morpholoy, Photoluminescence (PL)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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