Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

161-164

Citation:

K. Fujihira et al., "Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD", Materials Science Forum, Vols. 433-436, pp. 161-164, 2003

Online since:

September 2003

Export:

Price:

$38.00

[1] R. Ploss, R. Rupp and I. Zverev: Ext. Abstr. 3rd Europ. Conf. on Silicon Carbide and Related Materials 2000 (Kloster Banz, 2000), p.5.

[2] O. Kordina, K. Irvine, J. Sumakeris, H.S. Kong, M.J. Paisley and C.H. Carter Jr.: Mater. Sci. Forum, Vol. 264-268 (1998), p.107.

DOI: https://doi.org/10.4028/www.scientific.net/msf.264-268.107

[3] A. Ellison, J. Zhang, A. Henry and E. Janzen: J. Crystal Growth, Vol. 236 (2002), p.225.

[4] A. Ellison J. Zhang, J. Peterson, A. Henry, Q. Wahab, J.P. Bergman, Y.N. Makarov, A. Vorob'ev, A. Vehanen and E. Janzen: Mater. Sci. Eng., Vol. B61-62 (1999), p.113.

[5] H. Tsuchida, I. Kamata, T. Jikimoto and K. Izumi: Mater. Sci. Forum, Vol. 338-342 (2000), p.145.

[6] J. Zhang, A. Ellison, O. Danielsson, M.K. Linnarsson, A. Henry and E. Janzen: J. Crystal Growth, Vol. 241 (2002), p.421.

[7] K. Fujihira, T. Kimoto and H. Matsunami: Appl. Phys. Lett., Vol. 80 (2002), p.1586.

[8] K. Fujihira, T. Kimoto and H. Matsunami: Mater. Sci. Furum, Vol. 389-393 (2002), p.175.

[9] C. Hemmingsson, N.T. Son, O. Kordina, J.P. Bergman, E. Janzen, J.L. Lindstrom, S. Savage and N. Nordell: J. Appl. Phys., Vol. 81 (1997), p.6155.

[10] D. Aberg, A. Hallen and B.G. Svensson: Physica. B, Vol. 273-274 (1999), p.672.