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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Chemical Vapor Deposition of n-Type SiC Epitaxial...

Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

145-148

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.145

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Online since:

September 2003

Authors:

Rong Jun Wang, I. Bhat, T. Paul Chow

Keywords:

Chemical Vapor Deposition (CVD), Nitrogen Doping, Phosphorus Doping, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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