Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

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Periodical:

Materials Science Forum (Volumes 433-436)

Edited by:

Peder Bergman and Erik Janzén

Pages:

145-148

DOI:

10.4028/www.scientific.net/MSF.433-436.145

Citation:

R. J. Wang et al., "Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors", Materials Science Forum, Vols. 433-436, pp. 145-148, 2003

Online since:

September 2003

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$35.00

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