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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Temperature Effects in SiC Epitaxial Growth

Temperature Effects in SiC Epitaxial Growth

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

157-160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.157

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Online since:

September 2003

Authors:

James D. Oliver

Keywords:

Chemical Vapor Deposition (CVD), Doping Incorporation, Epitaxial Growth, Epitaxial Uniformity, Growth Rate, Temperature Variation

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] G. Wagner and K. Irmscher, SiC and Related Materials ECSCRM 2000, Materials Science Forum Vol. 353-356, pp.95-98. Slope Nitrogen Incorporation Efficiency y = 1. 81E+13x - 2. 59E+16 y = 4. 20E+13x - 6. 23E+16.

0E+00.

[5] 0E+14.

[1] 0E+15.

[1] 5E+15.

[2] 0E+15.

[2] 5E+15.

[3] 0E+15.

[3] 5E+15.

[4] 0E+15.

[4] 5E+15 1500 1520 1540 1560 1580 Temperature ( o C) Intercept Unintentional Background Doping y = 2. 50E+13x - 3. 72E+16 y = 1. 56E+13x - 2. 32E+16.

0E+00.

[5] 0E+14.

[1] 0E+15.

[1] 5E+15.

[2] 0E+15.

[2] 5E+15 1500 1520 1540 1560 1580 Growth Temperature ( o C) Temperature Intercept = 1488 C Nitrogen Incorporation.

0E+00.

[5] 0E+15.

[1] 0E+16.

[1] 5E+16.

[2] 0E+16.

[2] 5E+16 0 1 2 3 4 5 6 Intentional Nitrogen Dopant Carrier Concentration 1575 C 1555 C 1565 C 1510 C 1540 C 1570 C.