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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly...

Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

149-152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.149

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Online since:

September 2003

Authors:

Shun-ichi Nakamura, Tsunenobu Kimoto, Hiroyuki Matsunami

Keywords:

Atomic Force Microscope (AFM), Chemical Vapor Deposition (CVD), Homoepitaxial Growth, Nearly On-Axis (0001) Face, Surface Step Structures

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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