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4H-SiC Epitaxial Growth for High-Power Devices
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Predictions of Nitrogen Doping in SiC Epitaxial Layers
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Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC
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Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors
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Wide-Area Homoepitaxial Growth of 6H-SiC on Nearly On-Axis (0001) by Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Experiment and Modeling of the Large-Area Etching...

Experiment and Modeling of the Large-Area Etching and Growth Rate of Epitaxial SiC

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

141-144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.141

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Online since:

September 2003

Authors:

Jérôme Mezière, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Pierre Ferret, Lea Di Cioccio, Thierry Billon

Keywords:

Chemical Vapor Deposition (CVD), Epitaxial Growth, Etching, Growth Rate, Modeling

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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