Paper Titles

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System
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Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers
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Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
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Computational Modeling for the Development of CVD SiC Epitaxial Growth Processes
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Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?
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Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD
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Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
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The Effect of Thermal Gradients on SiC Wafers
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Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Is Al-Si a Good Melt for the Low-Temperature LPE...

Is Al-Si a Good Melt for the Low-Temperature LPE of 4H-SiC?

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.181

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Online since:

September 2003

Authors:

Christophe Jacquier, François Cauwet, Jean Claude Viala, Yves Monteil

Keywords:

Al-Si Melts, Liquid Phase Epitaxy (LPE), Low-Temperature, Silicon Carbide (SiC)

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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