Evolution of Stress-Induced Surface Damage and Stress-Relaxation of Electroplated Cu Films at Elevated Temperatures

Soo Jung Hwang; Junichi Koike; Young Chang Joo

doi:10.4028/www.scientific.net/MSF.475-479.3641

Paper Titles

Low Stress Tetrahedral Amorphous Carbon Films Prepared by Filtered Vacuum Arc Deposition
p.3623

Influence of Film Thickness on Intrinsic Growth Stress and Raman Evaluation of Tetrahedral Amorphous Carbon Films
p.3627

Microstructures and Properties of the DLC Films Prepared by PLD Process Using High Power High Frequency 308 nm Laser Beam
p.3631

Improvement of Adhesion of Cubic Boron Nitride Films: Effect of Interlayer and Deposition Parameters
p.3635

Evolution of Stress-Induced Surface Damage and Stress-Relaxation of Electroplated Cu Films at Elevated Temperatures
p.3641

Microscopic Investigation of Strain Localization and Fatigue Damage in Thin Cu Films
p.3647

Phase Separation into Nano-Crystalline Nitrides in Ternary Ti-Si-N System via N Implantation
p.3651

TiC/a-C Nanocomposite Coatings for Low Friction and Wear Resistance
p.3655

The Evaluation of Adhesion Energy in Thin Compressively Stressed Film by Using Delamination Buckle and Freehang Buckle
p.3661

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Evolution of Stress-Induced Surface Damage and Stress-Relaxation of Electroplated Cu Films at Elevated Temperatures

Abstract:

The reaction induced phase separation aimed for the distribution of nano-structured particles has been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) in ternary Ti-Si-N film via N+ implantation. The fabrication of Ti-20at%Si film has made on Si substrates by ion beam sputtering (IBS), and then N+ implantation with 50 keV has been conducted on these films. The selected area electron diffraction (SAED) from as-deposited film shows amorphous Ti-Si. As-deposited Ti-Si film exhibited high stability even for the heat treatment at 773K for 3600s. N+ implantation induced the direct formation of nano crystalline of fcc-TiNx within the Ti-Si film. The XPS depth profiling and chemical shift suggest that the preferential nitriding of Ti accompanied with the segregation of SiNx occurred during N-implantation.