A Short Synopsis of the Current Status of Porous SiC and GaN

Abstract:

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A brief historical development of porous SiC and GaN is given. SEM images of nine porous morphologies in 4H, 6H and 3C SiC are shown along with anodization details. Similarly, two porous GaN morphologies are presented. Applications and future prospects are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

251-256

DOI:

10.4028/www.scientific.net/MSF.483-485.251

Citation:

Y. Shishkin et al., "A Short Synopsis of the Current Status of Porous SiC and GaN", Materials Science Forum, Vols. 483-485, pp. 251-256, 2005

Online since:

May 2005

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Price:

$35.00

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