A Short Synopsis of the Current Status of Porous SiC and GaN

Y. Shishkin; Yue Ke; Robert P. Devaty; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.483-485.251

Paper Titles

Epitaxial SiC Formation at the SiO₂/Si Interface by C⁺ Implantation into SiO₂ and Subsequent Annealing
p.233

Microfabrication of Si Column Covered with SiC Film for Electron Emitter
p.237

Formation of Ferromagnetic SiC:Mn Phases
p.241

Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC Matrix
p.245

A Short Synopsis of the Current Status of Porous SiC and GaN
p.251

Preparation of Porous 4H-SiC by Surface Anodization
p.257

Optical Spectroscopy as a Tool for Observation of Porous SiC Graphitization
p.261

X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC Substrates
p.265

On Current Limitations in Porous SiC Applications
p.269

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485A Short Synopsis of the Current Status of Porous...

A Short Synopsis of the Current Status of Porous SiC and GaN

Abstract:

A brief historical development of porous SiC and GaN is given. SEM images of nine porous morphologies in 4H, 6H and 3C SiC are shown along with anodization details. Similarly, two porous GaN morphologies are presented. Applications and future prospects are discussed.