Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects

Abstract:

Interaction of boron and aluminum with interstitial carbon is studied using first principles calculations. It is shown that carbon can form very stable complexes with Al and B, forming a family of negative-U bistable defects with deep levels. The influence of this effect on the activation rate of p-type implants is discussed.

• Periodical: Materials Science Forum (Volumes 483-485)
• Pages: 519-522
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.483-485.519
• Online since: May 2005
• Authors: Adam Gali, T. Hornos, Peter Deák, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke
• Keywords: Al+C Complexes, B+C Complexes, Carbon Interstitial, Dopant Activation, Energy Levels

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