Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
Hydrogenation of SiC surfaces was carried out by annealing in ultra-pure hydrogen at temperatures of around 1000°C. The hydrogenated surfaces were studied using a variety of techniques and show exceptional properties which are discussed in the light of earlier studies of Si and SiC surfaces and interfaces.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
T. Seyller "Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation", Materials Science Forum, Vols. 483-485, pp. 535-540, 2005