Paper Titles

Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
p.519

Ab-Initio Study of Dopant Interstitials in 4H-SiC
p.523

Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC
p.527

3d-Transition Metals in Cubic and Hexagonal Silicon Carbide
p.531

Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
p.535

First Principles Simulations of SiC-Based Interfaces
p.541

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)
p.547

Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
p.551

Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
p.555

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Hydrogen-Saturated SiC-Surfaces: Model Systems for...

Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation

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Abstract:

Hydrogenation of SiC surfaces was carried out by annealing in ultra-pure hydrogen at temperatures of around 1000°C. The hydrogenated surfaces were studied using a variety of techniques and show exceptional properties which are discussed in the light of earlier studies of Si and SiC surfaces and interfaces.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

535-540

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.535

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Online since:

May 2005

Authors:

Thomas Seyller

Keywords:

Hydrogen, Infrared Absorption, Interface, Low-Energy Electron Diffraction, Photoelectron Spectroscopy, Reconstruction, Surface, Synchrotron Radiation (XRD)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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