Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion

Bharat Krishnan; Yaroslav Koshka

doi:10.4028/www.scientific.net/MSF.483-485.551

Paper Titles

3d-Transition Metals in Cubic and Hexagonal Silicon Carbide
p.531

Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
p.535

First Principles Simulations of SiC-Based Interfaces
p.541

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)
p.547

Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
p.551

Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
p.555

ALD Deposited Al₂ O₃ Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere
p.559

SiC/SiO₂ Interface States: Properties and Models
p.563

The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO₂ Defects
p.569

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Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion

Abstract:

Recombination-induced passivation (RIP) experiments were conducted on p-type SiC after plasma treatment in deuterium. Higher sensitivity of SIMS to deuterium allowed us to confirm that recombination-induced athermal migration of hydrogen is indeed a driving mechanism for the RIP phenomenon. Hydrogen (or deuterium) athermally migrates from the plasma-induced hydrogen- or deuterium-reach near-surface layer down to more than a micron in depth, which under certain conditions creates a sufficiently thick layer of the n-type conductivity in the originally ptype epilayer. Thermal admittance spectroscopy was applied to investigate the defect levels in the top portion of the bandgap of the RIP-induced n-type layer. A few different levels located close to the conduction band of the originally p-type material were investigated.