Paper Title:
Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
  Abstract

Recombination-induced passivation (RIP) experiments were conducted on p-type SiC after plasma treatment in deuterium. Higher sensitivity of SIMS to deuterium allowed us to confirm that recombination-induced athermal migration of hydrogen is indeed a driving mechanism for the RIP phenomenon. Hydrogen (or deuterium) athermally migrates from the plasma-induced hydrogen- or deuterium-reach near-surface layer down to more than a micron in depth, which under certain conditions creates a sufficiently thick layer of the n-type conductivity in the originally ptype epilayer. Thermal admittance spectroscopy was applied to investigate the defect levels in the top portion of the bandgap of the RIP-induced n-type layer. A few different levels located close to the conduction band of the originally p-type material were investigated.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
551-554
DOI
10.4028/www.scientific.net/MSF.483-485.551
Citation
B. Krishnan, Y. Koshka, "Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion", Materials Science Forum, Vols. 483-485, pp. 551-554, 2005
Online since
May 2005
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Price
$35.00
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