SiC/SiO2 Interface States: Properties and Models

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Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the dangling-bond-type defects commonly observed in the oxidized silicon. Among different models of these SiC/oxide interface states advanced during the past decade, two have received substantial experimental support. This first one is the “carbon cluster” model, which ascribes the traps with energy levels in the SiC bandgap to inclusions of elemental carbon formed during the SiC surface treatment and subsequent oxidation. The second model invokes intrinsic defects of SiO2 to account for the high density of interface states in the energy range close to the conduction band of SiC. Achievements in reducing the SiC/SiO2 defect density are discussed.

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Materials Science Forum (Volumes 483-485)

Edited by:

Dr. Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

563-568

Citation:

V. V. Afanas'ev et al., " SiC/SiO2 Interface States: Properties and Models ", Materials Science Forum, Vols. 483-485, pp. 563-568, 2005

Online since:

May 2005

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$38.00

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