Interface States in SiO2/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination

Toshiharu Ohnuma; Hidekazu Tsuchida; Tamotsu Jikimoto; Atsumi Miyashita; Masahito Yoshikawa

doi:10.4028/www.scientific.net/MSF.483-485.573

Paper Titles

Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
p.555

ALD Deposited Al₂ O₃ Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere
p.559

SiC/SiO₂ Interface States: Properties and Models
p.563

The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO₂ Defects
p.569

Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination
p.573

Structural and Electronic Properties of Si_1-xC_xO₂
p.577

Surface and Interface Studies of Si-Rich 4H-SiC and SiO₂
p.581

Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation
p.585

Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
p.589

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Interface States in SiO2/4H-SiC(0001) Interfaces...

Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination

Abstract:

First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been performed. Interface states due to Si-Si bonds appear at the valence band edge. Interface states at the midgap vanish when N atom terminates the Si dangling bond, but the interface states arising from the Si-N bonds appear at the valence band edge at the same time.