Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis

Abstract:

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Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and interface-trapped charge, Qit. Steam-grown oxides have a fixed charge density of Qf=-1x1012 cm-2, and a net interface-trapped charge density of Qit=4x1011cm-2. Addition of a thin low-pressure chemical-vapor deposited (LPCVD) silicon nitride layer decreased these parameters to Qf=-2x1011 cm-2 and Qit=4x1010 cm-2. Dry oxide shows a fixed charge density, Qf=-3x1012 cm-2 and interface-trapped charge density, Qit=4x1011 cm-2 which changes to Qf=+7x1010 cm-2 and Qit=1x1010 cm-2 with the addition of a LPCVD silicon nitride cap. Dry thermal oxide with a silicon nitride cap was used to passivate SiC MESFETs to achieve a power-added efficiency of 60% in pulsed operation at 3 GHz in Class AB bias conditions.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

589-592

DOI:

10.4028/www.scientific.net/MSF.483-485.589

Citation:

K. Matocha et al., "Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis", Materials Science Forum, Vols. 483-485, pp. 589-592, 2005

Online since:

May 2005

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Price:

$35.00

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