Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis

Kevin Matocha; Jesse B. Tucker; Ed Kaminsky

doi:10.4028/www.scientific.net/MSF.483-485.589

Paper Titles

Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination
p.573

Structural and Electronic Properties of Si_1-xC_xO₂
p.577

Surface and Interface Studies of Si-Rich 4H-SiC and SiO₂
p.581

Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation
p.585

Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
p.589

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
p.593

Technological Aspects of Ion Implantation in SiC Device Processes
p.599

Fabrication of Compact Ion Implanter for Silicon Carbide Devices
p.605

Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
p.609

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Characterization of SiC Passivation Using MOS...

Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis

Abstract:

Different SiC thermal oxide passivation techniques were characterized using UV-induced hysteresis to estimate the fixed charge, Qf, and interface-trapped charge, Qit. Steam-grown oxides have a fixed charge density of Qf=-1x1012 cm-2, and a net interface-trapped charge density of Qit=4x1011cm-2. Addition of a thin low-pressure chemical-vapor deposited (LPCVD) silicon nitride layer decreased these parameters to Qf=-2x1011 cm-2 and Qit=4x1010 cm-2. Dry oxide shows a fixed charge density, Qf=-3x1012 cm-2 and interface-trapped charge density, Qit=4x1011 cm-2 which changes to Qf=+7x1010 cm-2 and Qit=1x1010 cm-2 with the addition of a LPCVD silicon nitride cap. Dry thermal oxide with a silicon nitride cap was used to passivate SiC MESFETs to achieve a power-added efficiency of 60% in pulsed operation at 3 GHz in Class AB bias conditions.