Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal

Masami Shibagaki; Yasumi Kurematsu; Fumio Watanabe; Shigetaka Haga; Kuniaki Miura; Tomoyuki Suzuki; Masataka Satoh

doi:10.4028/www.scientific.net/MSF.483-485.609

Paper Titles

Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
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Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
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Technological Aspects of Ion Implantation in SiC Device Processes
p.599

Fabrication of Compact Ion Implanter for Silicon Carbide Devices
p.605

Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
p.609

Aluminium Implantation Induced Linear Surface Faults in 4H-SiC
p.613

Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing
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Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
p.621

Ar Annealing at 1600°C and 1650°C of Al⁺ Implanted p⁺/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature
p.625

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Development of the Novel Electron Bombardment...

Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal

Abstract:

We develop the rapid thermal anneal system of the implanted SiC, Electron Bombardment Anneal System (EBAS), which is able to heat up to 1900 oC with a rate of 320 oC/min in vacuum. Using this novel system, the annealing of N+ implanted SiC samples (total dose: 2.4 x 1015 cm-2, thickness: 220 nm) at 1900 oC for 0.5 min results in a low sheet resistance of 1.39 x 103 ohm/sq. with extremely low roughness of the surface (RMS value: 0.32 nm). It is also demonstrated that EBAS can anneal the sample with low electric power consumption.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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609-612

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.609

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Online since:

May 2005

Authors:

Masami Shibagaki, Yasumi Kurematsu, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Masataka Satoh

Keywords:

Electron Bombardement Anneal System (EBAS), Post Ion Implantation Anneal, Rapid Thermal Process (RTP), Silicon Carbide (SiC), Surface Morphology, Vacuum

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