Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
We develop the rapid thermal anneal system of the implanted SiC, Electron Bombardment Anneal System (EBAS), which is able to heat up to 1900 oC with a rate of 320 oC/min in vacuum. Using this novel system, the annealing of N+ implanted SiC samples (total dose: 2.4 x 1015 cm-2, thickness: 220 nm) at 1900 oC for 0.5 min results in a low sheet resistance of 1.39 x 103 ohm/sq. with extremely low roughness of the surface (RMS value: 0.32 nm). It is also demonstrated that EBAS can anneal the sample with low electric power consumption.
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
M. Shibagaki et al., "Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal", Materials Science Forum, Vols. 483-485, pp. 609-612, 2005