Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal

Abstract:

Article Preview

We develop the rapid thermal anneal system of the implanted SiC, Electron Bombardment Anneal System (EBAS), which is able to heat up to 1900 oC with a rate of 320 oC/min in vacuum. Using this novel system, the annealing of N+ implanted SiC samples (total dose: 2.4 x 1015 cm-2, thickness: 220 nm) at 1900 oC for 0.5 min results in a low sheet resistance of 1.39 x 103 ohm/sq. with extremely low roughness of the surface (RMS value: 0.32 nm). It is also demonstrated that EBAS can anneal the sample with low electric power consumption.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

609-612

DOI:

10.4028/www.scientific.net/MSF.483-485.609

Citation:

M. Shibagaki et al., "Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal", Materials Science Forum, Vols. 483-485, pp. 609-612, 2005

Online since:

May 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.