Technological Aspects of Ion Implantation in SiC Device Processes

Abstract:

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Technological aspects of ion implantation in SiC device processes are described. Annealing techniques to suppress surface roughening of implanted SiC (0001) are demonstrated. Trials to achieve a low sheet resistance are described for n-type and p-type doping. Implantation into the (11-20) face is also presented. Electrical behaviors of implants near implanted tail regions are discussed based on experiments.

Info:

Periodical:

Materials Science Forum (Volumes 483-485)

Edited by:

Roberta Nipoti, Antonella Poggi and Andrea Scorzoni

Pages:

599-604

DOI:

10.4028/www.scientific.net/MSF.483-485.599

Citation:

Y. Negoro et al., "Technological Aspects of Ion Implantation in SiC Device Processes", Materials Science Forum, Vols. 483-485, pp. 599-604, 2005

Online since:

May 2005

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Price:

$35.00

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