Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

David J. Meyer; Morgen S. Dautrich; Patrick M. Lenahan; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.483-485.593

Paper Titles

Structural and Electronic Properties of Si_1-xC_xO₂
p.577

Surface and Interface Studies of Si-Rich 4H-SiC and SiO₂
p.581

Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation
p.585

Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced Hysteresis
p.589

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors
p.593

Technological Aspects of Ion Implantation in SiC Device Processes
p.599

Fabrication of Compact Ion Implanter for Silicon Carbide Devices
p.605

Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal
p.609

Aluminium Implantation Induced Linear Surface Faults in 4H-SiC
p.613

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Observation of Deep Level Centers in 4H and 6H...

Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors

Abstract:

Utilizing an very sensitive electron spin resonance (ESR) technique, spin dependent recombination (SDR) we have identified interface and near interface trapping centers in 4H and 6H SiC/SiO2 metal oxide semiconductor field effect transistors (MOSFETs). We extend our group’s earlier observations on 6H devices to the more technologically important 4H system and find that several centers can play important roles in limiting the performance of SiC based MOSFETs.

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Silicon Carbide and Related Materials 2004

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Materials Science Forum (Volumes 483-485)

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593-596

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https://doi.org/10.4028/www.scientific.net/MSF.483-485.593

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Online since:

May 2005

Authors:

David J. Meyer, Morgen S. Dautrich, Patrick M. Lenahan, Aivars J. Lelis

Keywords:

Deep Level, Electron Spin Resonance, Field-Effect Transistor, Trapping Centers

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