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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Surface and Interface Studies of Si-Rich 4H-SiC...

Surface and Interface Studies of Si-Rich 4H-SiC and SiO₂

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

581-584

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.581

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Online since:

May 2005

Authors:

Charíya Virojanadara, Leif I. Johansson

Keywords:

Angle Resolved Photoemission, Oxidation, Silicon Carbide (SiC)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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