Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC

M. Bockstedte; Alexander Mattausch; Oleg Pankratov

doi:10.4028/www.scientific.net/MSF.483-485.527

Paper Titles

Effective-Mass Theory of Shallow Donors in 4H-SiC
p.511

Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
p.515

Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
p.519

Ab-Initio Study of Dopant Interstitials in 4H-SiC
p.523

Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC
p.527

3d-Transition Metals in Cubic and Hexagonal Silicon Carbide
p.531

Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
p.535

First Principles Simulations of SiC-Based Interfaces
p.541

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)
p.547

HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Kinetic Aspects of the Interstitial-Mediated Boron...

Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC

Abstract:

Using an ab initio method we analyze the mechanisms of the boron diffusion with emphasis on the role of the intrinsic interstitials. It is shown that the boron diffusion is dominated by a kick-out mechanism. The different effect of silicon and carbon interstitials gives rise to kinetic effects. A preference for a kick-in of the boron interstitial into the carbon lattice sites is found. Kinetic effects reported in co-implantation experiments and in-diffusion experiments are explained by our findings.