Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD

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In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.

Info:

Periodical:

Materials Science Forum (Volumes 490-491)

Edited by:

Sabine Denis, Takao Hanabusa, Bob Baoping He, Eric Mittemeijer, JunMa Nan, Ismail Cevdet Noyan, Berthold Scholtes, Keisuke Tanaka, KeWei Xu

Pages:

601-606

DOI:

10.4028/www.scientific.net/MSF.490-491.601

Citation:

H. Hirose et al., "Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD ", Materials Science Forum, Vols. 490-491, pp. 601-606, 2005

Online since:

July 2005

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$35.00

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