Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD

Abstract:

In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.

• Periodical: Materials Science Forum (Volumes 490-491)
• Pages: 601-606
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.490-491.601
• Online since: July 2005
• Authors: Hajime Hirose, Shinya Suzuki, Masahide Gotoh, Toshihiko Sasaki
• Keywords: Arc Ion Plating (AIP), Full-Width at Half Maximum, Internal Stress Balance, Ion Bombardment, Penetration Depth, Residual Stress, X-Ray Diffraction (XRD)

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DOI: 10.1016/s0040-6090(00)01280-3

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