Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD
In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.
Sabine Denis, Takao Hanabusa, Bob Baoping He, Eric Mittemeijer, JunMa Nan, Ismail Cevdet Noyan, Berthold Scholtes, Keisuke Tanaka, KeWei Xu
H. Hirose et al., "Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD ", Materials Science Forum, Vols. 490-491, pp. 601-606, 2005