Response Mechanism of Pd-GaN Schottky Barriers Comparative to Pd-Si Gas Sensors

A.Y. Hudeish; C.K. Tan; Azlan Abdul Aziz; Hassan Zainuriah

doi:10.4028/www.scientific.net/MSF.517.61

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Growth and Characterization of Ga₂O₃ Nanoribbons and Nanosheets
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Growth of Diamond-Like Carbon Thin Film Using Microwave Chemical Vapor Deposition
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Response Mechanism of Pd-GaN Schottky Barriers Comparative to Pd-Si Gas Sensors
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Crystallinity Studies of GaN/Si Films Grown by MOCVD at Various Substrate Temperatures Using XRD
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Structural Study of In₂O₃ Structures Grown by the Metalorganic Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vol. 517Response Mechanism of Pd-GaN Schottky Barriers...

Response Mechanism of Pd-GaN Schottky Barriers Comparative to Pd-Si Gas Sensors

Abstract:

In this paper we report on the characteristics of Pd/GaN and Pd/Si Schottky barriers exposed to different gases at various temperature range from 25°C to 500°C. The characteristics of Pd/GaN and Pd/Si Schottky barriers as gas sensors were measured as a function of temperature and ambient. Both types of sensor show changes in forward current upon introduction of different gases (N2, air, H2) into the ambient. The devices can be operated at large forward current, leading to large signal size for current at short response time for switching from one gas ambient to another such as N2 to H2 (2%) in N2. The signal size increases with the increase in measurement temperature due to more efficient cracking of the gas molecules. Both types of devices appear well suited to combustion control and leak detection.