Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications

Lin Cheng; Janna R. B. Casady; Michael S. Mazzola; V. Bondarenko; Robin L. Kelley; Igor Sankin; J. Neil Merrett; Jeff B. Casady

doi:10.4028/www.scientific.net/MSF.527-529.1183

Paper Titles

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
p.1167

Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO₂/High-K Dielectric Stack
p.1171

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties
p.1175

Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices
p.1179

Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications
p.1183

10 kV, 87 mΩcm² Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors
p.1187

Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs
p.1191

Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET
p.1195

Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation
p.1199

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Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications

Abstract:

In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with 6.6-ns rise time, 7.6-ns fall time, 4.8-ns turn-on and 5.4-ns turn-off delay time at 2.5 A drain current (IDS), which corresponds to a maximum switching frequency of 41 MHz – the fastest ever reported switching of SiC JFETs to our knowledge. At IDS of 12 A, a 19.1 MHz maximum switching frequency has been also achieved. Specific on-resistance (Rsp-on) in the linear region is 2.5 m·cm2 at VGS of 3 V. The drain current density is greater than 1410 A/cm2 at 9 V drain voltage. High-temperature operation of the 4H-SiC VJFETs has also been investigated at temperatures from 25 °C to 225 °C. Changes in the on-resistance with temperature are in the range of 0.90~1.33%/°C at zero gate bias and IDS of 50 mA. The threshold voltage becomes more negative with a negative shift of 0.096~0.105%/°C with increasing temperature.