Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

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4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga’s Figure of Merit (BFOM) has been obtained.

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Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1175-1178

Citation:

C. Ota et al., "Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties", Materials Science Forum, Vols. 527-529, pp. 1175-1178, 2006

Online since:

October 2006

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$38.00

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