Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers

Abstract:

We theoretically and experimentally compare the performance of a new JBS rectifier structure, the Buried Channel JBS (BC-JBS) rectifier, with that of the Lateral Channel JBS (LC-JBS) rectifier with 1.5kV blocking capability in 4H-SiC. The BC-JBS rectifier employs buried p-type regions to create a vertical JFET region to reduce the surface electric field at Schottky contact during reverse blocking while the LC-JBS rectifier adds a lateral channel together with the vertical JFET region to protect the surface Schottky interface during high-voltage blocking conditions. The LC-JBS rectifier offers low reverse leakage current while the BC-JBS rectifier demonstrates lower specific on-resistance. The optimized LC-JBS rectifiers show low forward drop (<1.8V) with PiN-like reverse characteristics.

• Periodical: Materials Science Forum (Volumes 527-529)
• Pages: 1159-1162
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.527-529.1159
• Online since: October 2006
• Authors: Lin Zhu, T. Paul Chow, Kenneth A. Jones, Charles Scozzie, Anant K. Agarwal
• Keywords: 4H-SiC, Junction Barrier Schottky (JBS) Diode, Rectifier, Schottky

References

[1] G. Spiazzi, S. Buso, M. Citron, M. Corradin and R. Pierobon: IEEE Tran. on Power Electronics Vol. 18 (2003), p.1249.

DOI: 10.1109/tpel.2003.818821

[2] F. Dahlquist and H. Lendenmann: Materials Science Forum Vols. 338-342 (2000), p.1179.

[3] K. Asano and Y. Sugawara: Proceedings of ISPSD, (2000), p.97.

[4] R. Singh, S-H. Ryu, and J.W. Palmour: Proceedings of ISPSD, (2000), p.101.

[5] L. Zhu, M. Shanbhag, T.P. Chow, and K.A. Jones: Materials Science Forum Vols. 433436 (2003), p.843.

[6] L. Zhu, C. Li, T.P. Chow, I. Bhat, K.A. Jones, C. Scozzie and A. Agarwal: Proceedings of ISPSD, (2005), p.283.

[7] L. Zhu, C. Li, T.P. Chow, I. B. Bhat, K.A. Jones, C. Scozzie and A. Agarwal: Journal of Electronic Materials Vol. 35, April (2006), p.754 a b.