Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
We theoretically and experimentally compare the performance of a new JBS rectifier structure, the Buried Channel JBS (BC-JBS) rectifier, with that of the Lateral Channel JBS (LC-JBS) rectifier with 1.5kV blocking capability in 4H-SiC. The BC-JBS rectifier employs buried p-type regions to create a vertical JFET region to reduce the surface electric field at Schottky contact during reverse blocking while the LC-JBS rectifier adds a lateral channel together with the vertical JFET region to protect the surface Schottky interface during high-voltage blocking conditions. The LC-JBS rectifier offers low reverse leakage current while the BC-JBS rectifier demonstrates lower specific on-resistance. The optimized LC-JBS rectifiers show low forward drop (<1.8V) with PiN-like reverse characteristics.
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
L. Zhu et al., "Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers", Materials Science Forum, Vols. 527-529, pp. 1159-1162, 2006