Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers

Abstract:

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We theoretically and experimentally compare the performance of a new JBS rectifier structure, the Buried Channel JBS (BC-JBS) rectifier, with that of the Lateral Channel JBS (LC-JBS) rectifier with 1.5kV blocking capability in 4H-SiC. The BC-JBS rectifier employs buried p-type regions to create a vertical JFET region to reduce the surface electric field at Schottky contact during reverse blocking while the LC-JBS rectifier adds a lateral channel together with the vertical JFET region to protect the surface Schottky interface during high-voltage blocking conditions. The LC-JBS rectifier offers low reverse leakage current while the BC-JBS rectifier demonstrates lower specific on-resistance. The optimized LC-JBS rectifiers show low forward drop (<1.8V) with PiN-like reverse characteristics.

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

1159-1162

DOI:

10.4028/www.scientific.net/MSF.527-529.1159

Citation:

L. Zhu et al., "Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers", Materials Science Forum, Vols. 527-529, pp. 1159-1162, 2006

Online since:

October 2006

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$35.00

[1] G. Spiazzi, S. Buso, M. Citron, M. Corradin and R. Pierobon: IEEE Tran. on Power Electronics Vol. 18 (2003), p.1249.

DOI: 10.1109/tpel.2003.818821

[2] F. Dahlquist and H. Lendenmann: Materials Science Forum Vols. 338-342 (2000), p.1179.

[3] K. Asano and Y. Sugawara: Proceedings of ISPSD, (2000), p.97.

[4] R. Singh, S-H. Ryu, and J.W. Palmour: Proceedings of ISPSD, (2000), p.101.

[5] L. Zhu, M. Shanbhag, T.P. Chow, and K.A. Jones: Materials Science Forum Vols. 433436 (2003), p.843.

[6] L. Zhu, C. Li, T.P. Chow, I. Bhat, K.A. Jones, C. Scozzie and A. Agarwal: Proceedings of ISPSD, (2005), p.283.

[7] L. Zhu, C. Li, T.P. Chow, I. B. Bhat, K.A. Jones, C. Scozzie and A. Agarwal: Journal of Electronic Materials Vol. 35, April (2006), p.754 a b.

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